![]() Finally, the outlooks and perspectives of AlN thin film based reconfigurable integrated photonics are provided. After that, photonic devices on hybrid Si-AlN and pure AlN thin film platforms are presented. The AlN piezoelectric MEMS transducer technologies are then described, including flexural, surface acoustic wave (SAW), Lamb wave resonators (LWR), and bulk acoustic wave (BAW). Here, we review the recent development of AlN thin film properties and processing. It has been studied and integrated into photonic integrated circuits (PICs) utilizing the mechanics at micro/nano scale in recent years. Aluminum nitride (AlN) is a popular piezoelectric material widely investigated in the field of Micro-Electro-Mechanical System (MEMS). Due to the demand for high-fidelity and high-speed optical interconnect, high-resolution sensing, and information processing, hybrid integrating more existing materials to improve performance or introduce novel functionalities with post-CMOS technology becomes essential. In the past few decades, silicon photonics with complementary metal-oxide-semiconductor (CMOS) compatibility has been well developed and successfully applied to commercial products. Red arrow marks the mechanical mode at 2.958 GHz that is used in the experiment. e, The top subpanel shows the microwave reflection S11, whereas the next three show the optomechanical response S21 of actuators 1–3 (labelled in a), respectively. Inset shows the relative position of the two modes in the ω − k space. The x-axis is frequency-calibrated relative to the centre frequency of the TE00 mode around 1,546 nm. d, An optical transmission spectrum showing a pair of TE00 and TM00 modes with around 3 GHz frequency spacing. White arrows mark the optical polarization directions. c, Finite element method numerical simulations of the vertical stress σz distribution of a typical HBAR mode at 2.9 GHz, and the optical profiles of the TE00 and TM00 modes of the quasi-square Si3N4 waveguide. The inset is a false-coloured SEM image of the sample cross-section, showing the vertical structure of the piezoelectric actuator and quasi-square Si3N4 photonic waveguide. b, An optical microscope image highlighting the bus–microring coupling section, the released SiO2 area, and the relative positions of Si3N4 waveguides (blue lines) and two AlN actuators. ![]() Mention this reference code on your application form.Characterization of optical and mechanical properties of the isolator deviceĪ, A false-coloured top-view SEM image of the fabricated device. The reference code for this position is 2023-005. Type of work: 10% literature study, 35% modeling/simulation, 20% fabrication, 35% characterization Required background: MSc degree in Applied Physics, Electrical Engineering, or Optical Engineering Type of work : 10% literature study, 35% modeling/simulation, 20% fabrication, Physics, Electrical Engineering, or Optical Engineeringīackground in photonics, but you also have a strong background in electronicsĪnd ability to work in an international environment Technology through imec 200-300 mm pilot CMOS lines and a connection withįields such as optical communications, lidar and optical sensing Process to demonstration/characterization Working at imec as a PhD student will bring This PhD will encompass everything from design toĪssembly of laser modules for real applications. Intensity noise, as well as assembling laser modules that include electronics components In advanced characterization techniques for measuring laser linewidth and You will learn about the design of advanced III-V-on-Si/SiN lasers, their fabrication and their characterization. This will involve some system integrationĪnd electronics work. Opto-electronic feedback system to maintain a narrow laser linewidth under Of fabricated devices and on the development and demonstration of an Heterogeneously integrated lasers in a clean room, to electro-opticalĬharacterization of fabricated devices. Research, from optical simulations and laser design, fabrication of Over the course of the PhD, your work will cover all aspects of Those multi-wavelength light sources will find theirĪre particularly appealing for datacenters. The case of a free-running laser shielded by an OI. This work is expected to result in the demonstration of multi-wavelength light sources bypassing the need of an OI and with a much narrower linewidth than in ![]() Sensitive to external reflections such as quantum dot lasers. PhD student will also carry out the design of laser diodes naturally less Si/SiN 200-300 mm photonic platforms using an opto-electronic feedback loop. Isolator-free ultranarrow linewidth III-V-on-Si lasers developed in imec’s The goal of the proposed PhD is to investigate actively stabilized ![]()
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